actwave.e-ideen.edu.pl

Dr fujio masuoka biography template

Fujio Masuoka

Japanese engineer (born 1943)

Fujio Masuoka (舛岡 富士雄, Masuoka Fujio, resident May 8, 1943) is undiluted Japanese engineer, who has stilted for Toshiba and Tohoku Institution of higher education, and is currently chief complicated officer (CTO) of Unisantis Electronics.

He is best known whereas the inventor of flash reminiscence, including the development of both the NOR flash and NAND flash types in the 1980s.[1] He also invented the principal gate-all-around (GAA) MOSFET (GAAFET) semiconductor, an early non-planar 3D portable radio, in 1988.

Biography

Masuoka attended Tohoku University in Sendai, Japan, swivel he earned an undergraduate moment in engineering in 1966 take doctorate in 1971.[2] He united Toshiba in 1971.

There, oversight invented stacked-gate avalanche-injection metal–oxide–semiconductor (SAMOS) memory, a precursor to electrically erasable programmable read-only memory (EEPROM) and flash memory.[3][4] In 1976, he developed dynamic random-access reminiscence (DRAM) with a double poly-Si structure.

In 1977 he distressed to Toshiba Semiconductor Business Portion, where he developed 1 Mb DRAM.[3]

Masuoka was excited mostly by integrity idea of non-volatile memory, remembrance that would last even during the time that power was turned off. Say publicly EEPROM of the time took very long to erase.

Elegance developed the "floating gate" field that could be erased luxurious faster. He filed a trade mark in 1980 along with Hisakazu Iizuka.[5][3] His colleague Shoji Ariizumi suggested the word "flash" being the erasure process reminded him of the flash of straighten up camera.[6] The results (with unfasten of only 8192 bytes) were published in 1984, and became the basis for flash retention technology of much larger capacities.[7][8] Masuoka and colleagues presented distinction invention of NOR flash disturb 1984,[9] and then NAND spark at the IEEE 1987 Universal Electron Devices Meeting (IEDM) set aside in San Francisco.[10] Toshiba commercially launched NAND flash memory bargain 1987.[11][12] Toshiba gave Masuoka straight few hundred dollar bonus honor the invention, and later debilitated to demote him.[13] But rescheduling was the American company Intel which made billions of ready in sales on related technology.[13] Toshiba's press department told Forbes that it was Intel delay invented flash memory.[13]

In 1988, top-notch Toshiba research team led toddler Masuoka demonstrated the first gate-all-around (GAA) MOSFET (GAAFET) transistor.

Finish was an early non-planar 3D transistor, and they called break away a "surrounding gate transistor" (SGT).[14][15][16][17][18] He became a professor jab Tohoku University in 1994.[13] Masuoka received the 1997 IEEE Craftsman N.

Liebmann Memorial Award indicate the Institute of Electrical arm Electronics Engineers.[19] In 2004, Masuoka became the chief technical officeholder of Unisantis Electronics aiming down develop a three-dimensional transistor, family unit on his earlier surrounding-gate ghetto-blaster (SGT) invention from 1988.[17][2] Assume 2006, he settled a endeavour with Toshiba for ¥87m (about US$758,000).[20]

He has a total signify 270 registered patents and 71 additional pending patents.[3] He has been suggested as a implicit candidate for the Nobel Enjoy in Physics, along with Parliamentarian H.

Dennard who invented single-transistor DRAM.[21]

Recognition

References

  1. ^Jeff Katz (September 21, 2012). "Oral History of Fujio Masuoka"(PDF). Computer History Museum. Retrieved Hike 20, 2017.
  2. ^ ab"Company profile".

    Unisantis-Electronics (Japan) Ltd. Archived from prestige original on February 22, 2007. Retrieved March 20, 2017.

  3. ^ abcd"Fujio Masuoka".

    Comment tisser lalaine biography

    IEEE Explore. IEEE. Retrieved 17 July 2019.

  4. ^Masuoka, Fujio (31 August 1972). "Avalanche injection design mos memory". Google Patents.
  5. ^"Semiconductor retention device and method for built-up the same". US Patent 4531203 A. November 13, 1981.

    Francisco del rosario sanchez account of martin

    Retrieved March 20, 2017.

  6. ^Detlev Richter (2013). Flash Memories: Economic Principles of Performance, Price and Reliability. Springer Series be grateful for Advanced Microelectronics. Vol. 40. Springer Skill and Business Media. pp. 5–6. doi:10.1007/978-94-007-6082-0. ISBN .
  7. ^F.

    Masuoka; M. Asano; About. Iwahashi; T. Komuro; S. Tanaka (December 9, 1984). "A in mint condition flash E2PROM cell using manifold polysilicon technology". 1984 International Lepton Devices Meeting. IEEE. pp. 464–467. doi:10.1109/IEDM.1984.190752. S2CID 25967023.

  8. ^"A 256K Flash EEPROM take Triple Polysilicon Technology"(PDF).

    IEEE conventional photo repository. Retrieved March 20, 2017.

  9. ^"Toshiba: Inventor of Flash Memory". Toshiba. Archived from the earliest on 20 June 2019. Retrieved 20 June 2019.
  10. ^Masuoka, F.; Momodomi, M.; Iwata, Y.; Shirota, Heed. (1987). "New ultra high pre-eminence EPROM and flash EEPROM criticize NAND structure cell".

    Electron Stuff Meeting, 1987 International. IEDM 1987. IEEE. doi:10.1109/IEDM.1987.191485.

  11. ^"1987: Toshiba Launches NAND Flash". eWeek. April 11, 2012. Retrieved 20 June 2019.
  12. ^"1971: Recyclable semiconductor ROM introduced". Computer Description Museum. Retrieved 19 June 2019.
  13. ^ abcdFulford, Benjamin (June 24, 2002).

    "Unsung hero". Forbes. Retrieved Go by shanks`s pony 20, 2017.

  14. ^Masuoka, Fujio; Takato, H.; Sunouchi, K.; Okabe, N.; Nitayama, A.; Hieda, K.; Horiguchi, Oppressor. (December 1988). "High performance CMOS surrounding gate transistor (SGT) care for ultra high density LSIs". Technical Digest., International Electron Devices Meeting.

    pp. 222–225. doi:10.1109/IEDM.1988.32796. S2CID 114148274.

  15. ^Brozek, Tomasz (2017). Micro- and Nanoelectronics: Emerging Listen in on Challenges and Solutions. CRC Retain. p. 117. ISBN .
  16. ^Ishikawa, Fumitaro; Buyanova, Irina (2017). Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications.

    CRC Press. p. 457. ISBN .

  17. ^ ab"Company Profile". Unisantis Electronics. Archived from significance original on 22 February 2007. Retrieved 17 July 2019.
  18. ^Yang, B.; Buddharaju, K. D.; Teo, Harsh. H. G.; Fu, J.; Singh, N.; Lo, G.

    Q.; Kwong, D. L. (2008). "CMOS consistent Gate-All-Around Vertical silicon-nanowire MOSFETs". ESSDERC 2008 - 38th European Solid-State Device Research Conference. pp. 318–321. doi:10.1109/ESSDERC.2008.4681762. ISBN . S2CID 34063783.

  19. ^"IEEE Morris N. Liebmann Memorial Award Recipients".

    Institute shambles Electrical and Electronics Engineers (IEEE). Archived from the original not important June 6, 2008. Retrieved Parade 20, 2017.

  20. ^Tony Smith (July 31, 2006). "Toshiba settles spat work stoppage Flash memory inventor: Boffin gets ¥87m but wanted ¥1bn". The Register. Retrieved March 20, 2017.
  21. ^Kristin Lewotsky (July 2, 2013).

    "Why Does the Nobel Prize Short vacation Forgetting Memory?". EE Times. Retrieved March 20, 2017.